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Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates

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Abstract

Accelerated degradation testing of long-wavelength (>1.25 µm) quantum-dot lasers made on GaAs substrates is carried out at a fixed current of 1.7 A, initial optical output of about 0.3 W, and a heat sink temperature of 60°C. No signs of degradation are revealed after testing for 450 h. The test bed is not sealed, inert gas purging is not performed, and the laser faces are not passivated.

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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 73, No. 1, 2003, pp. 140–142.

Original Russian Text Copyright © 2003 by Lundina, Shernyakov, Maksimov, Kayander, Tsatsul’nikov, Ledentsov, Zhukov, Maleev, Mikhrin, Ustinov, Alferov, Bimberg.

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Lundina, E.Y., Shernyakov, Y.M., Maksimov, M.V. et al. Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates. Tech. Phys. 48, 131–132 (2003). https://doi.org/10.1134/1.1538744

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  • DOI: https://doi.org/10.1134/1.1538744

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