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Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and a p-n junction in the substrate

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Abstract

An electroluminescent structure of the P-Ga0.92In0.08P0.05As0.08Sb0.87/p-InAs/n-InAs type containing a broken-gap P-p isotype heterojunction and a p-n junction in the substrate volume is obtained and is shown to exhibit emission peaks at λ=1.9 and 3.1 μm at 77 K and 2.1 and 3.6 μm at 300 K. The longwave luminescence band is due to radiative recombination in the p-region of the p-n junction. The shortwave luminescence band is due to recombination in the P-GaInPAsSb wide-bandgap solid solution layer to which non-equilibrium electrons are supplied from the p-n junction in the substrate volume.

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References

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin & V. V. Shustov

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  1. M. Aidaraliev
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  2. N. V. Zotova
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  3. S. A. Karandashev
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  4. B. A. Matveev
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  5. M. A. Remennyi
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  6. N. M. Stus’
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  7. G. N. Talalakin
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  8. V. V. Shustov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 23, 2002, pp. 58–62.

Original Russian Text Copyright © 2002 by A\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)daraliev, Zotova, Karandashev, Matveev, Remenny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Stus’, Talalakin, Shustov.

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Aidaraliev, M., Zotova, N.V., Karandashev, S.A. et al. Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and a p-n junction in the substrate. Tech. Phys. Lett. 28, 1001–1003 (2002). https://doi.org/10.1134/1.1535484

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  • DOI: https://doi.org/10.1134/1.1535484

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