Abstract
The results of experimental studies of the energy spectrum of X centers in ZnSe〈Ga〉 and ZnSe〈As〉 single crystals are presented; the results are in accord with the available calculations. The Stokes shift, the stabilization of the Fermi level near the extrema of allowed bands of ZnSe, anomalies in thermoluminescence and interband photoluminescence, and some other effects are explained on the basis of configuration-coordinate diagrams for associated defects VZn-Gai and VSe-Asi, taking into account tetrahedral and hexagonal positions of interstitial atoms. The absence of residual photoconductivity is attributed to the presence of r-and s-recombination centers in the crystals.
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Translated from Fizika Tverdogo Tela, Vol. 44, No. 12, 2002, pp. 2113–2116.
Original Russian Text Copyright © 2002 by Tkachuk.
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Tkachuk, P.N. X centers in ZnSe〈Ga〉 and ZnSe〈As〉 single crystals. Phys. Solid State 44, 2211–2215 (2002). https://doi.org/10.1134/1.1529912
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DOI: https://doi.org/10.1134/1.1529912