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A study of the oxygen precipitation kinetics in zirconium-doped silicon

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Abstract

The kinetics of oxygen precipitation at 900 and 1050°C was studied in Czochralski-grown silicon single crystals doped to various levels with zirconium. It is established that zirconium, while not participating in the nucleation of oxygen precipitates, decreases the concentration of interstitial oxygen in the crystals.

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References

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Authors and Affiliations

  1. Ul’yanovsk State University, Ul’yanovsk, Russia

    V. V. Svetukhin, A. G. Grishin, T. S. Il’ina, V. K. Prokof’eva & B. N. Rygalin

  2. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia

    V. V. Svetukhin, A. G. Grishin, T. S. Il’ina, V. K. Prokof’eva & B. N. Rygalin

Authors
  1. V. V. Svetukhin
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  2. A. G. Grishin
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  3. T. S. Il’ina
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  4. V. K. Prokof’eva
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  5. B. N. Rygalin
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 22, 2002, pp. 78–81.

Original Russian Text Copyright © 2002 by Svetukhin, Grishin, Il’ina, Prokof’eva, Rygalin.

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Svetukhin, V.V., Grishin, A.G., Il’ina, T.S. et al. A study of the oxygen precipitation kinetics in zirconium-doped silicon. Tech. Phys. Lett. 28, 962–963 (2002). https://doi.org/10.1134/1.1526897

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  • DOI: https://doi.org/10.1134/1.1526897

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