Abstract
Transverse sections of the (11–20) cuts of a 6H-SiC substrate-porous SiC layer-epitaxial 6H-SiC layer structure were studied using electron microscopy. An intermediate layer is revealed between pores and unetched SiC which consists of a damaged region containing two-dimensional defects and a completely amorphous region. Energy-dispersive X-ray spectra measured within local (∼3 nm) areas in various regions of the transverse sections of the structure studied showed that the intermediate layer is enriched with carbon in comparison to the stoichiometric substrate composition. The excess carbon content is retained in the layer of epitaxial SiC contacting the porous layer.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. S. Shor, I. Grimberg, B. Z. Weiss, and B. D. Kutz, Appl. Phys. Lett. 62, 2836 (1993).
T. Matsumoto, J. Takahashi, T. Tamaki, et al., Appl. Phys. Lett. 64, 226 (1994).
A. O. Konstantinov, C. L. Harris, and E. Jansen, Appl. Phys. Lett. 65, 2699 (1994).
A. O. Konstantinov, A. Henry, C. I. Harris, and E. Jansen, Appl. Phys. Lett. 66(17), 2250 (1995).
A. M. Danishevskii, V. B. Shuman, A. Yu. Rogachev, and P. A. Ivanov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 2122 (1995) [Semiconductors 29, 1106 (1995)].
A. M. Danishevskii, V. B. Shuman, A. Yu. Rogachev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 1064 (1996) [Semiconductors 30, 564 (1996)].
A. M. Danishevskii, M. V. Zamoryanskaya, A. A. Sitnikova, et al., Semicond. Sci. Technol. 13, 1111 (1998).
N. A. Mynbaeva, N. S. Savkina, A. Zubrilov, et al., Mater. Res. Soc. Symp. Proc. 587, 08.6.1. (2000).
N. S. Savkina, A. A. Lebedev, D. V. Davydov, et al., Mater. Sci. Eng. 61–62, 165 (1999).
N. S. Savkina, V. V. Ratnikov, and V. B. Shuman, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35(2), 159 (2001) [Semiconductors 35, 153 (2001)].
Author information
Authors and Affiliations
Additional information
__________
Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 22, 2002, pp. 23–31.
Original Russian Text Copyright © 2002 by Sorokin, Savkina, Shuman, Lebedev, Mosina, Hutchison.
Rights and permissions
About this article
Cite this article
Sorokin, L.M., Savkina, N.S., Shuman, V.B. et al. Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate. Tech. Phys. Lett. 28, 935–938 (2002). https://doi.org/10.1134/1.1526889
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.1526889