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Liquid phase epitaxy of (Sn2)1−x (InSb)x solid solution layers

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Abstract

Epitaxial layers of (Sn2)1−x (InSb)x solid solutions were grown from an indium-based solution melt confined between two horizontal GaAs substrates in a temperature interval from 325 to 200°C. Scanning microprobe and X-ray diffraction investigations of the GaAs-(Sn2)1−x (InSb)x heterostructures showed that crystallographic perfection of the epitaxial layers depends on the epitaxial growth conditions.

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Authors and Affiliations

  1. Physical Engineering Institute “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

    A. S. Saidov, A. Sh. Razzakov & D. V. Saparov

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  1. A. S. Saidov
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  2. A. Sh. Razzakov
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  3. D. V. Saparov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 22, 2002, pp. 7–10.

Original Russian Text Copyright © 2002 by Saidov, Razzakov, Saparov.

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Saidov, A.S., Razzakov, A.S. & Saparov, D.V. Liquid phase epitaxy of (Sn2)1−x (InSb)x solid solution layers. Tech. Phys. Lett. 28, 927–928 (2002). https://doi.org/10.1134/1.1526886

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  • DOI: https://doi.org/10.1134/1.1526886

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