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Energy relaxation during inelastic electron scattering on localized states

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Abstract

A mechanism which can be responsible for the phase relaxation in polycrystalline semiconductors and metals is proposed. This mechanism is related to the inelastic scattering of electrons on localized states with energies near the Fermi level.

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Authors and Affiliations

  1. Institute Superior de Engenharia de Lisboa, Portugal

    V. K. Dugaev & M. Vieira

  2. Chernovtsy Branch, Institute for Problems in Materials Science, National Academy of Sciences of Ukraine, Chernovtsy, Ukraine

    V. K. Dugaev & V. L. Volkov

  3. Technical University, Poznan, Poland

    M. Oszwaldowski

Authors
  1. V. K. Dugaev
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  2. V. L. Volkov
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  3. M. Oszwaldowski
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  4. M. Vieira
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Additional information

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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 21, 2002, pp. 51–56.

Original Russian Text Copyright © 2002 by Dugaev, Volkov, Oszwaldowski, Vieira.

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Dugaev, V.K., Volkov, V.L., Oszwaldowski, M. et al. Energy relaxation during inelastic electron scattering on localized states. Tech. Phys. Lett. 28, 904–906 (2002). https://doi.org/10.1134/1.1526878

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  • DOI: https://doi.org/10.1134/1.1526878

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