Abstract
It shown that the porosity and thickness of a porous silicon carbide layer can be nondestructively monitored provided that the sample weight loss upon electrochemical etching is known and the reflectance spectrum exhibits interference.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 21, 2002, pp. 48–50.
Original Russian Text Copyright © 2002 by Shuman, Savkina.
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Shuman, V.B., Savkina, N.S. Nondestructive determination of the characteristics of porous silicon carbide layers. Tech. Phys. Lett. 28, 902–903 (2002). https://doi.org/10.1134/1.1526877
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DOI: https://doi.org/10.1134/1.1526877