Abstract
The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO3 ∥ (100)Ba0.75Sr0.25TiO3 ∥ (001)SrRO3 heterostructure grown by laser ablation on (001)La0.294Sr0.706Al0.647Ta0.353O3 were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba0.75Sr0.25TiO3 layer increased approximately linearly with decreasing temperature in the interval 320–200 K. The real part of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ɛ′/ɛ0=4400 at T M≈285 K (f=100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba0.75Sr0.25TiO3 ferroelectric layer, observed for T<T M, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.
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Translated from Fizika Tverdogo Tela, Vol. 44, No. 11, 2002, pp. 2061–2068.
Original Russian Text Copyright © 2002 by Yu. Bo\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)kov, Erts, Claeson, A. Bo\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)kov.
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Boikov, Y.A., Erts, D., Claeson, T. et al. Dielectric response of Ba0.75Sr0.25TiO3 epitaxial films to electric field and temperature. Phys. Solid State 44, 2157–2164 (2002). https://doi.org/10.1134/1.1521473
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DOI: https://doi.org/10.1134/1.1521473