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Diffusion of As ions and self-diffusion in silicon during implantation

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Abstract

Experimental concentration profiles of As ions in a silicon substrate at temperatures of 20, 600, and 1050°C and ion current of 40 µA/cm2, as well as at 1050°C and 10 µA/cm2, are presented. On the basis of our and previously published experimental data, the process of radiation-stimulated ionic diffusion and self-diffusion in silicon is simulated. A number of interesting dependences, which are discussed in the conclusion of this study, are obtained.

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Authors and Affiliations

  1. Russian Research Centre Kurchatov Institute, pl. Kurchatova 1, Moscow, 123182, Russia

    K. D. Demakov, V. A. Starostin & S. G. Shemardov

Authors
  1. K. D. Demakov
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  2. V. A. Starostin
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  3. S. G. Shemardov
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 72, No. 10, 2002, pp. 131–133.

Original Russian Text Copyright © 2002 by Demakov, Starostin, Shemardov.

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Demakov, K.D., Starostin, V.A. & Shemardov, S.G. Diffusion of As ions and self-diffusion in silicon during implantation. Tech. Phys. 47, 1333–1336 (2002). https://doi.org/10.1134/1.1514818

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  • DOI: https://doi.org/10.1134/1.1514818

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