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Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions

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Abstract

The electrical characteristics of (p)3C-SiC-(n)6H-SiC epitaxial heterostructures obtained by sublimation epitaxy in vacuum are studied. The band discontinuities are determined and the energy band diagram of the heterojunction is constructed. It is shown that the obtained heterostructure offers a promising material for high electron mobility transistors.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. A. Lebedev, A. M. Strel’chuk, D. V. Davydov, N. S. Savkina, A. N. Kuznetsov & L. M. Sorokin

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  1. A. A. Lebedev
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  2. A. M. Strel’chuk
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  3. D. V. Davydov
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  4. N. S. Savkina
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  5. A. N. Kuznetsov
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  6. L. M. Sorokin
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__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 18, 2002, pp. 89–94.

Original Russian Text Copyright © 2002 by Lebedev, Strel’chuk, Davydov, Savkina, Kuznetsov, Sorokin.

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Lebedev, A.A., Strel’chuk, A.M., Davydov, D.V. et al. Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions. Tech. Phys. Lett. 28, 792–794 (2002). https://doi.org/10.1134/1.1511788

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  • DOI: https://doi.org/10.1134/1.1511788

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