Abstract
The photoluminescence (PL) and photoexcitation spectra of carbonized porous silicon (por-Si) doped with gallium in the course of a high-temperature annealing were studied. It is shown that carbonization leads to the formation of a heterojunction between 3C-SiC nanograins and silicon quantum wires. The spectrum of PL from gallium-doped silicon carbide nanograins is shifted by 0.35 eV toward higher energies relative to the spectrum of bulk por-Si and exhibits several features related to the radiative annihilation processes involving phonons and donor-acceptor (N-Ga) pairs. The PL excitation spectra of carbonized por-Si display two resonance bands with the energies E 1=2.8–3.1 eV and E 2=3.2–3.7 eV.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 17, 2002, pp. 74–81.
Original Russian Text Copyright © 2002 by Kostishko, Nagornov, Atazhanov, Mikov.
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Kostishko, B.M., Nagornov, Y.S., Atazhanov, S.R. et al. The features of photoluminescence from nanograins of gallium-doped cubic silicon carbide. Tech. Phys. Lett. 28, 743–745 (2002). https://doi.org/10.1134/1.1511771
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DOI: https://doi.org/10.1134/1.1511771