Skip to main content
SpringerLink
Log in

The influence of a photoinduced volume charge on the weak-radiation-induced interband photoproduction of carriers in semiconductors with impurity recombination centers

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Analytical expressions for the average concentrations of photogenerated electrons and holes are obtained outside the framework of the quasineutrality approximation in the case of a strong surface recombination in the presence of a single-level impurity recombination centers. It is shown that the quasineutrality approximation becomes incorrect with decreasing sample size in the direction of irradiation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. V. A. Kholodnov, Pis’ma Zh. Éksp. Teor. Fiz. 67(9), 655 (1998) [JETP Lett. 67, 685 (1998)].

    Google Scholar 

  2. V. A. Kholodnov and A. A. Drugova, Pis’ma Zh. Tekh. Fiz. 25(5), 1 (1999) [Tech. Phys. Lett. 25, 167 (1999)].

    Google Scholar 

  3. V. A. Kholodnov, Proc. SPIE 3819, 98 (1999).

    ADS  Google Scholar 

  4. V. A. Kholodnov, A. A. Drugova, and N. E. Kurochkin, in Proceedings of the 25th International Conference on the Physics of Semiconductors, Osaka, Japan, 2000, Part II, p. 1445.

  5. R. A. Smith, Semiconductors (Cambridge Univ. Press, Cambridge, 1978; Mir, Moscow, 1982).

    Google Scholar 

  6. V. L. Bonch-Bruevich and S. G. Kalashnikov, Physics of Semiconductors (Nauka, Moscow, 1990).

    Google Scholar 

  7. A. Rogalski et al., Infrared Photon Detectors (SPIE Optical Engineering Press, Bellingham, 1995).

    Google Scholar 

  8. A. A. Drugova and V. A. Kholodnov, Solid-State Electron. 38(6), 1247 (1995).

    Article  Google Scholar 

  9. V. A. Kholodnov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30(6), 1011 (1996) [Semiconductors 30, 538 (1996)].

    Google Scholar 

  10. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. ORION Research, Development, and Production Corporation, State Scientific Center of the Russian Federation, Moscow, Russia

    V. A. Kholodnov & A. A. Drugova

Authors
  1. V. A. Kholodnov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. A. Drugova
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 17, 2002, pp. 16–24.

Original Russian Text Copyright © 2002 by Kholodnov, Drugova.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kholodnov, V.A., Drugova, A.A. The influence of a photoinduced volume charge on the weak-radiation-induced interband photoproduction of carriers in semiconductors with impurity recombination centers. Tech. Phys. Lett. 28, 714–718 (2002). https://doi.org/10.1134/1.1511763

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1511763

Keywords

Search

Navigation