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The electrical and photoelectrical properties of n-In2Se3-p-InSe heterostructures

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Abstract

The current-voltage and voltage-capacitance characteristics of an originally fabricated photosensitive, radiation-stable n-In2Se3-p-InSe heterostructure were measured at liquid nitrogen temperature and in the temperature interval from 230 to 330 K. It is established that the direct currents are determined (i) by the thermoemission of carriers and their recombination at the interface and (ii) by tunneling via local centers. The reverse currents are also due to the tunneling via local centers. The spectral dependence of the relative quantum efficiency of the heterostructure is presented.

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References

  1. J. Martinez-Pastor, A. Segura, J. L. Valdes, and A. Chevy, J. Appl. Phys. 62(2), 1477 (1987).

    ADS  Google Scholar 

  2. S. I. Drapak, Z. D. Kovalyuk, V. V. Netyaga, and V. B. Orletskii, Pis’ma Zh. Tekh. Fiz. 28(17), 1 (2002) [Tech. Phys. Lett. 28, 707 (2002)].

    Google Scholar 

  3. M. C. Martinez-Tomaz, V. Munoz, M. V. Andres, et al., Z. Phys. B 91, 25 (1993).

    Google Scholar 

  4. A. Segura, J. Martinez-Pastor, B. Mari, et al., J. Appl. Phys. 21(3), 249 (1987).

    Google Scholar 

  5. A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions (Academic, New York, 1972; Mir, Moscow, 1975).

    Google Scholar 

  6. C. De Blasi, A. V. Drigo, G. Micocci, and A. Tepore, J. Cryst. Growth 94(2), 455 (1989).

    Google Scholar 

  7. V. I. Strikha, Contact Phenomena in Semiconductors (Kiev, 1982).

  8. S. V. Bulyarskii and A. V. Zhukov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35(5), 560 (2001) [Semiconductors 35, 539 (2001)].

    Google Scholar 

  9. O. V. Kurnosova and A. A. Pakhomova, Fiz. Tekh. Poluprovodn. (Leningrad) 20(10), 1868 (1986) [Sov. Phys. Semicond. 20, 1171 (1986)].

    Google Scholar 

  10. A. V. Novoselova, V. B. Lazarev, Z. S. Medvedeva, et al., Physicochemical Properties of Semiconductor Substances: A Handbook (Nauka, Moscow, 1979).

    Google Scholar 

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Authors and Affiliations

  1. Frantsevich Institute of Material Sciences Problems (Chernivtsi Department), National Academy of Sciences of Ukraine, Chernivtsi, Ukraine

    S. I. Drapak, V. V. Netyaga & Z. D. Kovalyuk

Authors
  1. S. I. Drapak
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  2. V. V. Netyaga
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  3. Z. D. Kovalyuk
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 17, 2002, pp. 9–15.

Original Russian Text Copyright © 2002 by Drapak, Netyaga, Kovalyuk.

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Drapak, S.I., Netyaga, V.V. & Kovalyuk, Z.D. The electrical and photoelectrical properties of n-In2Se3-p-InSe heterostructures. Tech. Phys. Lett. 28, 711–713 (2002). https://doi.org/10.1134/1.1511762

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