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On the mechanisms of current transfer in n-In2Se3-p-GaSe heterostructures

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Abstract

The current-voltage and capacitance-voltage characteristics of originally fabricated photosensitive, radiation-stable anisotype n-In2Se3-p-GaSe heterostructures are presented. The electrical properties of these heterostructures depend on the method of fabrication, which is explained by variation of the band parameters of indium selenide.

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Authors and Affiliations

  1. Frantsevich Institute of Material Sciences Problems (Chernivtsi Department), National Academy of Sciences of Ukraine, Chernivtsi, Ukraine

    S. I. Drapak, Z. D. Kovalyuk, V. V. Netyaga & V. B. Orletskii

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  1. S. I. Drapak
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  2. Z. D. Kovalyuk
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  3. V. V. Netyaga
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  4. V. B. Orletskii
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__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 17, 2002, pp. 1–8.

Original Russian Text Copyright © 2002 by Drapak, Kovalyuk, Netyaga, Orletski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Drapak, S.I., Kovalyuk, Z.D., Netyaga, V.V. et al. On the mechanisms of current transfer in n-In2Se3-p-GaSe heterostructures. Tech. Phys. Lett. 28, 707–710 (2002). https://doi.org/10.1134/1.1511761

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  • DOI: https://doi.org/10.1134/1.1511761

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