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Experimental and theoretical studies of lattice distortions caused by charged 3d impurities in II–IV semiconductors

  • Proceedings of the XI Feofilov Workshop “Spectroscopy of Crystals Activated by Rare-Earth and Transition-Metal Ions” (Kazan, Tatarstan, Russia, September 24–28, 2001)
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Abstract

The results of studies of photoinduced lattice vibration modes associated with charged 3d impurities (in particular, Ni) in II–IV semiconductors (ZnSe, ZnO) and solid solutions ZnSSe and ZnCdSe are presented. Experimental optical exciton-vibration spectroscopy studies revealed that the local vibration modes are coupled, which is due to strong anharmonicity of the local vibrations. Analysis of phonon replicas of the zerophonon line in the spectra allows one to elucidate the nature of the anharmonicity. Model calculations performed for ZnSe: Ni and ZnO: Ni crystals revealed that the nearest neighbor environment of a charged Ni impurity is highly distorted. A change in the charged state of Ni leads to shifts in lines of calculated and experimentally measured x-ray emission spectra and, therefore, should be taken into account.

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Authors and Affiliations

  1. Institute of Metal Physics, Ural Division, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, 620219, Russia

    V. I. Sokolov, N. B. Gruzdev, E. A. Shirokov, V. N. Starovoitova & A. V. Sokolov

  2. Ural State Technical University, pr. Lenina 51, Yekaterinburg, 620083, Russia

    A. N. Kislov & I. A. Nekrasov

Authors
  1. V. I. Sokolov
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  2. N. B. Gruzdev
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  3. E. A. Shirokov
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  4. V. N. Starovoitova
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  5. A. V. Sokolov
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  6. A. N. Kislov
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  7. I. A. Nekrasov
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__________

Translated from Fizika Tverdogo Tela, Vol. 44, No. 8, 2002, pp. 1459–1461.

Original Russian Text Copyright © 2002 by Sokolov, Gruzdev, Shirokov, Starovo\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\)tova, Sokolov, Kislov, Nekrasov.

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Sokolov, V.I., Gruzdev, N.B., Shirokov, E.A. et al. Experimental and theoretical studies of lattice distortions caused by charged 3d impurities in II–IV semiconductors. Phys. Solid State 44, 1526–1528 (2002). https://doi.org/10.1134/1.1501351

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  • DOI: https://doi.org/10.1134/1.1501351

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