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Nonequilibrium semiconductor-metal phase transition due to self-heating

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Abstract

A model of the nonequilibrium semiconductor-metal phase transition in narrow-gap transition metals due to self-heating is considered. It is shown that self-heating may diminish the energy gap and, as a consequence, increase the current. Parameters resposible for the bistable behavior of the system are found.

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Authors and Affiliations

  1. Ural State Technical University, ul. Mira 19, Yekaterinburg, 620002, Russia

    A. V. Melkikh & A. A. Povzner

Authors
  1. A. V. Melkikh
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  2. A. A. Povzner
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 72, No. 7, 2002, pp. 141–142.

Original Russian Text Copyright © 2002 by Melkikh, Povzner.

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Melkikh, A.V., Povzner, A.A. Nonequilibrium semiconductor-metal phase transition due to self-heating. Tech. Phys. 47, 932–933 (2002). https://doi.org/10.1134/1.1495063

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  • DOI: https://doi.org/10.1134/1.1495063

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