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Conductance anisotropy of δ-Si doped GaAs layers grown by molecular beam epitaxy on (111)A GaAs substrates and misoriented in the \([2\bar 1\bar 1]\) direction

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, Moscow, 103907, Russia

    G. B. Galiev, V. G. Mokerov (Corresponding Member of the RAS), V. A. Kul’bachinskii, V. G. Kytin, R. A. Lunin, A. V. Derkach & I. S. Vasil’evskii

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  1. G. B. Galiev
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  2. V. G. Mokerov
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  3. V. A. Kul’bachinskii
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  4. V. G. Kytin
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  5. R. A. Lunin
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  6. A. V. Derkach
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  7. I. S. Vasil’evskii
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__________

Translated from Doklady Akademii Nauk, Vol. 384, No. 5, 2002, pp. 611–614.

Original Russian Text Copyright © 2002 by Galiev, Mokerov, Kul’bachinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Kytin, Lunin, Derkach, Vasil’evski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Galiev, G.B., Mokerov, V.G., Kul’bachinskii, V.A. et al. Conductance anisotropy of δ-Si doped GaAs layers grown by molecular beam epitaxy on (111)A GaAs substrates and misoriented in the \([2\bar 1\bar 1]\) direction. Dokl. Phys. 47, 419–421 (2002). https://doi.org/10.1134/1.1493376

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  • DOI: https://doi.org/10.1134/1.1493376

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