Abstract
It is established that bismuth crystals under the simultaneous action of a constant magnetic field and current pulses exhibit a correlation between the microhardness and the mobility of twinning dislocations. It is shown that application of the external fields favors translation of the twinning dislocations along the twin-matrix boundaries.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 12, 2002, pp. 80–84.
Original Russian Text Copyright © 2002 by Pinchook, Shavrei.
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Pinchook, A.I., Shavrei, S.D. A correlation between the microhardness and the mobility of twinning dislocations in bismuth crystals exposed to constant magnetic field and pulsed electric field. Tech. Phys. Lett. 28, 525–526 (2002). https://doi.org/10.1134/1.1490979
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DOI: https://doi.org/10.1134/1.1490979