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The effect of hydrogen etching on the electrical properties of autoepitaxial silicon carbide layers

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Abstract

Experimental data showing that preliminary hydrogen etching of a SiC substrate influences the concentration of donors or acceptors in autoepitaxial SiC layers are presented. The impurity concentration in the epitaxial layers grown on etched and unetched substrates may differ by an order of magnitude. A physical explanation of the observed correlation is proposed. The importance of the effect of competitive etching on the epitaxial growth is pointed out.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. V. Zelenin, D. V. Davydov, M. L. Korogodskii & A. A. Lebedev

Authors
  1. V. V. Zelenin
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  2. D. V. Davydov
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  3. M. L. Korogodskii
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  4. A. A. Lebedev
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__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 9, 2002, pp. 58–62.

Original Russian Text Copyright © 2002 by Zelenin, Davydov, Korogodski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Lebedev.

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Zelenin, V.V., Davydov, D.V., Korogodskii, M.L. et al. The effect of hydrogen etching on the electrical properties of autoepitaxial silicon carbide layers. Tech. Phys. Lett. 28, 382–384 (2002). https://doi.org/10.1134/1.1482743

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  • DOI: https://doi.org/10.1134/1.1482743

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