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The effect of a surface layer on determination of the dielectric functions of ZnTe films by the ellipsometric technique

  • Physical and Quantum Optics
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Abstract

By means of spectroellipsometric technique, the dielectric functions of zinc telluride films, 0.1–1.7 µm thick, grown by molecular beam epitaxy (MBE) are studied. The presence of a thin layer on the surface of the films, noticeably affecting the results of measurements, is established. The analysis of spectra of the ZnTe dielectric functions available in the literature shows that the surface layer was present in all samples studied, regardless of the method of preparation. It is shown that studying the interference oscillations of the pseudodielectric function makes it possible to detect this layer and to correct properly the measured spectra of the dielectric functions.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    V. A. Shvets & M. V. Yakushev

Authors
  1. V. A. Shvets
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  2. M. V. Yakushev
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__________

Translated from Optika i Spektroskopiya, Vol. 92, No. 5, 2002, pp. 847–850.

Original Russian Text Copyright © 2002 by Shvets, Yakushev.

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Shvets, V.A., Yakushev, M.V. The effect of a surface layer on determination of the dielectric functions of ZnTe films by the ellipsometric technique. Opt. Spectrosc. 92, 780–783 (2002). https://doi.org/10.1134/1.1481146

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  • DOI: https://doi.org/10.1134/1.1481146

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