Skip to main content
SpringerLink
Log in

Shallow thermal donors in nitrogen-doped silicon single crystals

  • Semiconductors and Dielectrics
  • Published:
Physics of the Solid State Aims and scope Submit manuscript

Abstract

Czochralski-grown nitrogen-doped silicon crystals contain shallow thermal donors (STD) which are not present in reference crystals. In the course of annealing at 600 or 650°C, the STD concentration reaches saturation and this concentration scales with nitrogen content N as N1/2. This implies that an STD includes only one nitrogen atom and that the most likely model of the STD defect is the NOm complex of an interstitial nitrogen atom with m oxygen atoms. The number m is estimated as, on the average, m=3 from data on the temperature dependence of the equilibrium constant for the complex formation reaction

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Suezawa, K. Sumino, H. Harada, and T. Abe, Jpn. J. Appl. Phys. 25(10), L859 (1986).

    Google Scholar 

  2. H. Navarro, J. Griffin, J. Wever, and L. Genzel, Solid State Commun. 58, 151 (1986).

    Article  Google Scholar 

  3. J. A. Griffin, J. Hartung, J. Weber, et al., Appl. Phys. A 48(1), 41 (1989).

    Article  Google Scholar 

  4. A. Hara, T. Fukuda, T. Miyabo, and I. Hirai, Appl. Phys. Lett. 54(7), 626 (1989).

    Article  ADS  Google Scholar 

  5. A. Hara, M. Aoki, M. Koizuka, and T. Fukuda, J. Appl. Phys. 75(6), 2929 (1994).

    Article  ADS  Google Scholar 

  6. D. Yang, R. Fan, L. Li, et al., Appl. Phys. Lett. 68(4), 487 (1996).

    Article  ADS  Google Scholar 

  7. R. C. Newman, J. C. Tucker, N. G. Semaltianos, et al., Phys. Rev. B 54(10), R6803 (1996).

    Article  ADS  Google Scholar 

  8. R. C. Newman, M. J. Ashwin, R. E. Pritchard, and J. H. Tucker, Phys. Status Solidi B 210, 519 (1998).

    ADS  Google Scholar 

  9. P. M. Grinshtein, G. V. Lazareva, E. V. Orlova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 12(1), 68 (1978) [Sov. Phys. Semicond. 12, 68 (1978)].

    Google Scholar 

  10. A. Kanamori and M. Kanamori, J. Appl. Phys. 50(12), 8095 (1979).

    Article  ADS  Google Scholar 

  11. D. Yang, R. Fan, L. Li, et al., J. Appl. Phys. 80(3), 1493 (1996).

    ADS  Google Scholar 

  12. Y. Yatsurugi, N. Akijama, Y. Endo, and T. Nozaki, J. Electrochem. Soc. 120(7), 975 (1973).

    Google Scholar 

  13. J. S. Blakemore, Semiconductor Statistics (Pergamon, Oxford, 1962; Mir, Moscow, 1964).

    Google Scholar 

  14. H. J. Stein, Mater. Res. Soc. Symp. Proc. 59, 523 (1986).

    Google Scholar 

  15. T. Abe, H. Harada, N. Ozawa, and K. Adomi, Mater. Res. Soc. Symp. Proc. 59, 537 (1986).

    Google Scholar 

  16. F. B. Rasmussen, S. Oberg, R. Jones, et al., Mater. Sci. Eng. B 36, 91 (1996).

    Google Scholar 

  17. T. Ito and T. Abe, Appl. Phys. Lett. 53(1), 39 (1988).

    ADS  Google Scholar 

  18. B. I. Boltaks, Diffusion and Point Defects in Semiconductors (Nauka, Leningrad, 1972).

    Google Scholar 

  19. H. Sawada and K. Kawakami, Phys. Rev. B 62(3), 1851 (2000).

    Article  ADS  Google Scholar 

  20. H. Kageshima, A. Taguchi, and K. Wada, Appl. Phys. Lett. 76(25), 3718 (2000).

    Article  ADS  Google Scholar 

  21. G. P. Ewels, R. Jones, S. Oberg, et al., Phys. Rev. Lett. 77(5), 865 (1996).

    Article  ADS  Google Scholar 

  22. P. Wagner, R. Oeder, and W. Zulehner, Appl. Phys. A 46(2), 73 (1988).

    Article  Google Scholar 

  23. J. Mikkelsen, Mater. Res. Soc. Symp. Proc. 59, 19 (1986).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. State Rare-Metal Research Institute, Bol’shoi Tolmachevskii per. 5, Moscow, 109017, Russia

    V. V. Voronkov, G. I. Voronkova, A. V. Batunina, V. N. Golovina, L. V. Arapkina, N. B. Tyurina, A. S. Gulyaeva & M. G. Mil’vidskii

Authors
  1. V. V. Voronkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. I. Voronkova
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. V. Batunina
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. N. Golovina
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. L. V. Arapkina
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. N. B. Tyurina
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. A. S. Gulyaeva
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. M. G. Mil’vidskii
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Fizika Tverdogo Tela, Vol. 44, No. 4, 2002, pp. 700–704.

Original Russian Text Copyright © 2002 by Voronkov, Voronkova, Batunina, Golovina, Arapkina, Tyurina, Gulyaeva, Mil’vidski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

Rights and permissions

Reprints and permissions

About this article

Cite this article

Voronkov, V.V., Voronkova, G.I., Batunina, A.V. et al. Shallow thermal donors in nitrogen-doped silicon single crystals. Phys. Solid State 44, 727–731 (2002). https://doi.org/10.1134/1.1470566

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1470566

Keywords

Search

Navigation