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Microwave modulated light reflection in semiconductors

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Abstract

A new contactless modulation spectroscopy method for the investigation of semiconductor structures was experimentally realized. The technique employs the microwave-field-induced heating of free charge carriers in the semiconductor. Acting upon the exciton and acceptor states in a homogeneous GaAs film, the field-heated carriers modify the permittivity spectrum of the semiconductor near the fundamental absorption edge. This change is manifested in the effect of the microwave modulated field on the light reflection from a GaAs samples placed in the field.

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Authors and Affiliations

  1. IRE-Polus Group, Fryazino, Moscow oblast, Russia

    M. A. Chernikov & O. A. Ryabushkin

  2. Fryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia

    M. A. Chernikov & O. A. Ryabushkin

Authors
  1. M. A. Chernikov
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  2. O. A. Ryabushkin
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 24, 2001, pp. 29–34.

Original Russian Text Copyright © 2001 by Chernikov, Ryabushkin.

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Chernikov, M.A., Ryabushkin, O.A. Microwave modulated light reflection in semiconductors. Tech. Phys. Lett. 27, 1038–1040 (2001). https://doi.org/10.1134/1.1432342

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