Calculation of the temperature gradient in the melt zone during the electric-transport liquid phase epitaxy of silicon carbide based solid solutions

Abstract

The temperature distribution in a growth cell and the temperature gradient in the melt zone during the electric-field liquid phase epitaxy of silicon carbide based solid solutions (ytterbium-gallium, ytterbium-aluminum) were calculated with an allowance for the growth cell geometry. The analysis was based on a solution of the stationary thermal conductivity equations in all five regions of the standard growth cell. The solution was obtained taking into account the following factors: (i) Joule’s heating; (ii) Peltier’s heating (cooling) at the electrode-source (substrate)-melt zone interfaces; (iii) contact heat liberated at the electrode-source (substrate) interface; (iv) dissolution heat; and (v) crystallization heat. Expressions for the temperature gradient ∇T in the melt zone as a function of the current density and the dimensions of regions in the growth cell are obtained.