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Effect of the metal-semiconductor phase transition on the capacitance of an aluminum-dielectric-vanadium dioxide heterostructure

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Abstract

The temperature dependence of the electric capacitance of an aluminum-dielectric-vanadium dioxide heterostructure was studied. The capacitance exhibits a jumplike change in the region of the metal-semiconductor phase transition temperature. A qualitative model is suggested that relates a change in the capacitance to a jump in the conductivity of vanadium caused by the phase transition.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. A. Bugaev, S. E. Nikitin & E. I. Terukov

Authors
  1. A. A. Bugaev
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  2. S. E. Nikitin
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  3. E. I. Terukov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 21, 2001, pp. 76–80.

Original Russian Text Copyright © 2001 by Bugaev, Nikitin, Terukov.

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Bugaev, A.A., Nikitin, S.E. & Terukov, E.I. Effect of the metal-semiconductor phase transition on the capacitance of an aluminum-dielectric-vanadium dioxide heterostructure. Tech. Phys. Lett. 27, 924–925 (2001). https://doi.org/10.1134/1.1424394

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  • DOI: https://doi.org/10.1134/1.1424394

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