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Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates

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Abstract

The anisotropy of the longitudinal magnetoresistance has been found for a two-dimensional electron gas with a high mobility and concentration in GaAs quantum wells grown by molecular beam epitaxy on GaAs(100) substrates. The experimental data obtained are explained by the self-organization of spatially modulated heterointerfaces and are in agreement with the results of studying growth surfaces by atomic force microscopy.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russia

    A. A. Bykov, A. K. Bakarov, A. V. Goran, A. V. Latyshev & A. I. Toropov

Authors
  1. A. A. Bykov
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  2. A. K. Bakarov
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  3. A. V. Goran
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  4. A. V. Latyshev
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  5. A. I. Toropov
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Translated from Pis'ma v Zhurnal Éksperimental'no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 74, No. 3, 2001, pp. 182–185.

Original Russian Text Copyright © 2001 by Bykov, Bakarov, Goran, Latyshev, Toropov.

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Bykov, A.A., Bakarov, A.K., Goran, A.V. et al. Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates. Jetp Lett. 74, 164–167 (2001). https://doi.org/10.1134/1.1410222

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  • DOI: https://doi.org/10.1134/1.1410222

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