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The light reflection from semiconductor heterostructures modulated by a double polarized radiofrequency field

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Abstract

An rf modulation optical spectroscopy method for the study of semiconductor heterostructures is suggested which employs the effect of the light reflection coefficient modulation under the action of two rf fields with different configurations. The dependence of the rf-modulated light reflection spectra at the fundamental absorption edge of a semiconductor on the rf field polarization allows various layers of the heterostructure to be selectively studied. A model is proposed that explains the features observed in the reflection spectra of the light modulated by longitudinal and transverse rf electric fields in a GaAs/AlGaAs heterostructure.

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Authors and Affiliations

  1. Fryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia

    A. O. Volkov, O. A. Ryabushkin & M. S. Povolotskyi

  2. Dipartamento di Ingegneria Elettronika, Università di Roma Tor Vergata, 00133, Roma, Italia

    A. O. Volkov, O. A. Ryabushkin & M. S. Povolotskyi

Authors
  1. A. O. Volkov
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  2. O. A. Ryabushkin
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  3. M. S. Povolotskyi
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Translated from Pis’ma v Zhurnal Tekhnichesko\(j_k \sim 1/\sqrt[4]{\tau }\) Fiziki, Vol. 27, No. 18, 2001, pp. 8–13.

Original Russian Text Copyright © 2001 by Volkov, Ryabushkin, Povolotskyi.

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Volkov, A.O., Ryabushkin, O.A. & Povolotskyi, M.S. The light reflection from semiconductor heterostructures modulated by a double polarized radiofrequency field. Tech. Phys. Lett. 27, 758–760 (2001). https://doi.org/10.1134/1.1407351

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  • DOI: https://doi.org/10.1134/1.1407351

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