Abstract
The effect of photocurrent amplification in an In2O3-GaSe heterostructure with the barrier plane perpendicular to the base semiconductor layer was experimentally observed. At a reverse bias of U=10 V, the gain reached M≈82 and the absolute current sensitivity amounted to 30–32 A/W. An analysis of the current-voltage characteristics allowed a mechanism of the charge transfer through dielectric to be determined that is always operative on the surface of gallium monoselenide in the heterostructures fabricated by spraying. It is suggested that the mechanism of conductivity can be modified by changing the barrier plane orientation from parallel to perpendicular to the GaSe layers.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(j_k \sim 1/\sqrt[4]{\tau }\) Fiziki, Vol. 27, No. 18, 2001, pp. 1–7.
Original Russian Text Copyright © 2001 by Drapak, Kovalyuk.
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Drapak, S.I., Kovalyuk, Z.D. The effect of photocurrent amplification in an In2O3-GaSe heterostructure. Tech. Phys. Lett. 27, 755–757 (2001). https://doi.org/10.1134/1.1407350
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DOI: https://doi.org/10.1134/1.1407350