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X-ray irradiation at subthreshold energies modifies the surface micromorphology of epitaxial silicon layers on sapphire

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Abstract

Atomic force microscopy investigations revealed a change in the surface microrelief of the heteroepitaxial silicon films on sapphire substrates after pulsed X-ray irradiation at an energy of E≤140 keV.

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Authors and Affiliations

  1. Nizhni Novgorod State University, Nizhni Novgorod, Russia

    A. N. Kiselev, V. A. Perevoshchikov, V. D. Skupov & D. O. Filatov

Authors
  1. A. N. Kiselev
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  2. V. A. Perevoshchikov
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  3. V. D. Skupov
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  4. D. O. Filatov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(j_k \sim 1/\sqrt[4]{\tau }\) Fiziki, Vol. 27, No. 17, 2001, pp. 35–39.

Original Russian Text Copyright © 2001 by Kiselev, Perevoshchikov, Skupov, Filatov.

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Kiselev, A.N., Perevoshchikov, V.A., Skupov, V.D. et al. X-ray irradiation at subthreshold energies modifies the surface micromorphology of epitaxial silicon layers on sapphire. Tech. Phys. Lett. 27, 725–727 (2001). https://doi.org/10.1134/1.1405240

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  • DOI: https://doi.org/10.1134/1.1405240

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