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Hyperbolic excitons in semiconductors

  • Semiconductors and Dielectrics
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Abstract

The energy and damping of the quasi-stationary state corresponding to a hyperbolic exciton in a semiconductor crystal are calculated. It was assumed that the screened Coulomb potential describes the interaction between the electron and hole. The resonance conditions due to the hyperbolic exciton are determined.

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Authors and Affiliations

  1. Voronezh Pedagogical University, ul. Lenina 86, Voronezh, 394043, Russia

    V. I. Belyavsky & R. A. Konchakov

Authors
  1. V. I. Belyavsky
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  2. R. A. Konchakov
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__________

Translated from Fizika Tverdogo Tela, Vol. 43, No. 9, 2001, pp. 1558–1561.

Original Russian Text Copyright © 2001 by Belyavsky, Konchakov.

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Belyavsky, V.I., Konchakov, R.A. Hyperbolic excitons in semiconductors. Phys. Solid State 43, 1621–1625 (2001). https://doi.org/10.1134/1.1402212

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