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Formation of resistive properties of two-phase semiconductor-metal systems based on FeSi1+x with small deviations from stoichiometry

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Abstract

Using the method of finite elements it has been found that in a two-phase system a semiconductor-metal concentrational transition takes place. Specific features of the dependence on concentration and temperature of the effective electrical conductivity in a FeSi-FeSi2 system are studied in the vicinity of critical concentrations.

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Authors and Affiliations

  1. Ural State Technical University, Yekaterinburg, 620002, Russia

    A. A. Povzner, A. G. Andreeva, I. N. Sachkov & V. V. Kryuk

Authors
  1. A. A. Povzner
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  2. A. G. Andreeva
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  3. I. N. Sachkov
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  4. V. V. Kryuk
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 71, No. 8, 2001, pp. 109–111.

Original Russian Text Copyright © 2001 by Povzner, Andreeva, Sachkov, Kryuk.

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Povzner, A.A., Andreeva, A.G., Sachkov, I.N. et al. Formation of resistive properties of two-phase semiconductor-metal systems based on FeSi1+x with small deviations from stoichiometry. Tech. Phys. 46, 1037–1039 (2001). https://doi.org/10.1134/1.1395126

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  • DOI: https://doi.org/10.1134/1.1395126

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