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The effect of space charge on the characteristics of ZnS thin-film electroluminescent devices

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Abstract

From experimental time dependences of the instantaneous brightness and the total current passing through a ZnS: Mn thin-film electroluminescent device, capacitance-voltage, charge-voltage, and current-voltage characteristics of the device are calculated. Conditions for negative differential resistance (NDR) of S and N types are found. An NDR mechanism that exploits the ionization and the recharge of deep donors and acceptors (zinc and sulfur vacancies) with the formation of space charge at the cathodic and anodic interfaces of the phosphor is suggested.

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Authors and Affiliations

  1. Ul’yanovsk State University, Ul’yanovsk, 432700, Russia

    N. T. Gurin, O. Yu. Sabitov & A. V. Shlyapin

Authors
  1. N. T. Gurin
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  2. O. Yu. Sabitov
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  3. A. V. Shlyapin
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 71, No. 8, 2001, pp. 48–58.

Original Russian Text Copyright © 2001 by Gurin, Sabitov, Shlyapin.

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Gurin, N.T., Sabitov, O.Y. & Shlyapin, A.V. The effect of space charge on the characteristics of ZnS thin-film electroluminescent devices. Tech. Phys. 46, 977–987 (2001). https://doi.org/10.1134/1.1395118

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