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Generation and accumulation of dislocations on the silicon surface under the action of pulse-periodic emission from a YAG: Nd laser

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Abstract

Solid-phase damage of the silicon surface due to the generation and accumulation of dislocations is studied. The dislocations are generated under the pulse-periodic action of a YAG: Nd laser. The number of laser pulses that causes surface damage vs. power density and pulse repetition period is derived. A mechanism responsible for the generation and accumulation of the dislocations at the surface is suggested.

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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 71, No. 8, 2001, pp. 33–38.

Original Russian Text Copyright © 2001 by Banishev, Golubev, Kremnev.

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Banishev, A.F., Golubev, V.S. & Kremnev, A.Y. Generation and accumulation of dislocations on the silicon surface under the action of pulse-periodic emission from a YAG: Nd laser. Tech. Phys. 46, 962–967 (2001). https://doi.org/10.1134/1.1395116

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  • DOI: https://doi.org/10.1134/1.1395116

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