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Electron excitations in LiB3O5 crystals with defects: Low-temperature time-resolved luminescence VUV spectroscopy

  • Semiconductors and Dielectrics
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Abstract

The dynamics of electron excitations and luminescence of LiB3O5 (LBO) single crystals was studied using low-temperature luminescence vacuum ultraviolet spectroscopy with a subnanosecond time resolution under photoexcitation with synchrotron radiation. The kinetics of the photoluminescence (PL) decay, the time-resolved PL emission spectra, and the time-resolved PL excitation spectra of LBO were measured at 7 and 290 K, respectively. The PL emission bands peaking at 2.7 eV and 3.3 eV were attributed to the radiative transitions of electronic excitations connected with lattice defects of LBO. The intrinsic PL emission bands at 3.6 and 4.2 eV were associated with the radiative annihilation of two kinds of self-trapped electron excitations in LBO. The processes responsible for the formation of localized electron excitations in LBO were discussed and compared with those taking place in wide-gap oxides.

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Translated from Fizika Tverdogo Tela, Vol. 43, No. 8, 2001, pp. 1396–1404.

Original Russian Text Copyright © 2001 by Ogorodnikov, Pustovarov, Kirm, Kruzhalov, Isaenko.

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Ogorodnikov, I.N., Pustovarov, V.A., Kirm, M. et al. Electron excitations in LiB3O5 crystals with defects: Low-temperature time-resolved luminescence VUV spectroscopy. Phys. Solid State 43, 1454–1463 (2001). https://doi.org/10.1134/1.1395083

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