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Buffer layers for the growth of YBa2Cu3O7−x films on silicon

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Abstract

Experimental structural characteristics of the SrTiO3, NdGaO3, and CeO2 buffer films obtained by ion-plasma sputter deposition on silicon substrates are presented. It is demonstrated that the phase composition and the level of internal stresses in the films strongly depend on the deposition temperature. Optimum technological conditions for the growth of oriented SrTiO3, NdGaO3, and CeO2 films on silicon are determined. The structural perfection of the buffer layers thus obtained is sufficient to provide for the subsequent growth of high-quality YBa2Cu3O7−x films on silicon substrates.

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Authors and Affiliations

  1. St. Petersburg State Electrotechnical University, St. Petersburg, Russia

    S. V. Razumov & A. V. Tumarkin

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  1. S. V. Razumov
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  2. A. V. Tumarkin
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 14, 2001, pp. 56–62.

Original Russian Text Copyright © 2001 by Razumov, Tumarkin.

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Razumov, S.V., Tumarkin, A.V. Buffer layers for the growth of YBa2Cu3O7−x films on silicon. Tech. Phys. Lett. 27, 599–601 (2001). https://doi.org/10.1134/1.1388957

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  • DOI: https://doi.org/10.1134/1.1388957

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