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Erbium electroluminescence in an Al/a-Si:H(Er)/p-c-Si/Al heterostructure

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Abstract

It is demonstrated for the first time that a high-intensity electroluminescence of erbium in amorphous hydrogenated silicon can be obtained using an Al/a-Si:H(Er)/p-c-Si/Al structure operated in a forward bias regime.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. O. Kon’kov, A. N. Kuznetsov, P. E. Pak, E. I. Terukov & L. S. Granitsyna

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  1. I. O. Kon’kov
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  2. A. N. Kuznetsov
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  3. P. E. Pak
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  4. E. I. Terukov
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  5. L. S. Granitsyna
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 13, 2001, pp. 30–33.

Original Russian Text Copyright © 2001 by Kon’kov, Kuznetsov, Pak, Terukov, Granitsyna.

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Kon’kov, I.O., Kuznetsov, A.N., Pak, P.E. et al. Erbium electroluminescence in an Al/a-Si:H(Er)/p-c-Si/Al heterostructure. Tech. Phys. Lett. 27, 542–543 (2001). https://doi.org/10.1134/1.1388936

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  • DOI: https://doi.org/10.1134/1.1388936

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