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On luminescence enhancement in the narrow-gap phase of PbS-CdS heterogeneous semiconductor

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Abstract

A great enhancement of photoluminescence from CdS-doped PbS [1] can be attributed to the recombination flux from the wide-into narrow-gap phase due to the field of the variband transition region. A semiconductor heterostructure model accounting for the enhancement of luminescence in the PbS-CdS system is presented. The concentration profile of nonequilibrium charge carriers and the integral intensity of luminescence at the interface between the narrow-and wide-gap phase are numerically studied.

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Authors and Affiliations

  1. Chernyshevsky State University, ul. Astrakhanskaya 83, Saratov, 410026, Russia

    A. G. Rokakh & N. B. Trofimova

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  1. A. G. Rokakh
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  2. N. B. Trofimova
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 71, No. 7, 2001, pp. 140–142.

Original Russian Text Copyright © 2001 by Rokakh, Trofimova.

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Rokakh, A.G., Trofimova, N.B. On luminescence enhancement in the narrow-gap phase of PbS-CdS heterogeneous semiconductor. Tech. Phys. 46, 926–928 (2001). https://doi.org/10.1134/1.1387560

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  • DOI: https://doi.org/10.1134/1.1387560

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