Abstract
It is demonstrated that saturation of the photoelectric amplification coefficient G with increasing voltage V applied to a sample can be suppressed by introducing a variband layer near a current contact to which the minority charge carriers are driven by the electric field. This effect is considered in the case of interband photogeneration and recombination mechanisms operative, for example, in CdHgTe-based materials widely used for detecting weak emission in the wavelength intervals of λ=8–12 and 3–5 μm [1].
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 12, 2001, pp. 42–50.
Original Russian Text Copyright © 2001 by Kholodnov, Drugova.
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Kholodnov, V.A., Drugova, A.A. On the possibility of suppressing the saturation of photoelectric amplification of weak optical emission in semiconductors by forming near-contact variband layers. Tech. Phys. Lett. 27, 504–507 (2001). https://doi.org/10.1134/1.1383839
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DOI: https://doi.org/10.1134/1.1383839