Abstract
Thin layers of InN are grown by molecular beam epitaxy on (0001) sapphire substrates. The influence of thin (15 nm) InN buffer layers and their temperature treatment on the structural quality of the grown layers is investigated by double-crystal and triple-crystal x-ray diffractometry. It is revealed that the preliminary high-temperature (900°C) annealing of the buffer layer leads to a notable improvement in the quality of the layers grown on this buffer. The densities of vertical screw and vertical edge dislocations decrease (to 1.9×108 cm−2 and 1.3×1011 cm−2, respectively) with an increase in the distance from the interface (by ∼1 µm).
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. Nakamura, Semicond. Sci. Technol. 14(6), R27 (1999).
Q.-X. Guo, T. Yamamura, A. Yoshida, and N. Itoh, J. Appl. Phys. 75(10), 4927 (1994).
W.-K. Chen, Y.-Ch. Pan, H.-Ch. Lin, et al., Jpn. J. Appl. Phys. 36(12B), L1625 (1997).
M.-Ch. Lee, H.-Ch. Lin, Y.-Ch. Pan, et al., Appl. Phys. Lett. 73(18), 2606 (1998).
V. V. Mamutin, V. A. Vekshin, V. Yu. Davydov, et al., Phys. Status Solidi A 176, 247 (1999).
V. V. Mamutin, V. N. Zhmerik, T. V. Shubina, et al., Pis’ma Zh. Tekh. Fiz. 24(12), 30 (1998) [Tech. Phys. Lett. 24, 467 (1998)].
J. E. Ayers, J. Cryst. Growth 135, 71 (1994).
V. Srikant, J. S. Speck, and D. R. Clarke, J. Appl. Phys. 82(9), 4286 (1997).
R. N. Kyutt and T. S. Argunova, Nuovo Cimento D 19, 267 (1997).
T. Metzger, R. Hopler, E. Born, et al., Philos. Mag. A 77(4), 1013 (1998).
K. Kobayashi, A. A. Yamaguchi, Sh. Kimura, et al., Jpn. J. Appl. Phys. 38(6A/B), L611 (1999).
C. O. Dunn and E. F. Koch, Acta Metall. 5, 548 (1957).
R. N. Kyutt, V. V. Ratnikov, G. N. Mosina, and M. P. Shcheglov, Fiz. Tverd. Tela (St. Petersburg) 41(1), 30 (1999) [Phys. Solid State 41, 25 (1999)].
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika Tverdogo Tela, Vol. 43, No. 5, 2001, pp. 913–917.
Original Russian Text Copyright © 2001 by Ratnikov, Mamutin, Vekshin, Ivanov.
Rights and permissions
About this article
Cite this article
Ratnikov, V.V., Mamutin, V.V., Vekshin, V.A. et al. X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses. Phys. Solid State 43, 949–954 (2001). https://doi.org/10.1134/1.1371383
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.1371383