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Bound-exciton emission bands in ZnSe single crystals and mixed plasmon-phonon modes

  • Semiconductors and Dielectrics
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Abstract

The paper reports a cathodoluminescence study of ZnSe single crystals annealed in a Bi melt at 1200 K for 120 h. It is found that the distance between the phonon structure satellites in the bound-exciton series I s1 -nLO and I d1 -nLO and the relative satellite intensity are different in samples with different conduction electron concentrations. It is shown that this difference is due to the mixing of the plasmon and phonon modes. The shape of the bound-exciton emission spectrum in ZnSe crystals in the 450–470 nm region is calculated, and a satisfactory agreement with the experiment calculations is obtained.

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Authors and Affiliations

  1. Moldova State University, ul. Mateevich 60, Chishinau, 2009, Moldova

    A. A. Klyukanov, K. D. Sushkevich & A. Z. Awawdeh

  2. Moscow State University, Vorob’evy gory, Moscow, 119899, Russia

    V. S. Vavilov, M. V. Chukichev & R. R. Rezvanov

Authors
  1. V. S. Vavilov
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  2. A. A. Klyukanov
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  3. K. D. Sushkevich
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  4. M. V. Chukichev
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  5. A. Z. Awawdeh
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  6. R. R. Rezvanov
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Additional information

__________

Translated from Fizika Tverdogo Tela, Vol. 43, No. 5, 2001, pp. 776–778.

Original Russian Text Copyright © 2001 by Vavilov, Klyukanov, Sushkevich, Chukichev, Awawdeh, Rezvanov.

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Vavilov, V.S., Klyukanov, A.A., Sushkevich, K.D. et al. Bound-exciton emission bands in ZnSe single crystals and mixed plasmon-phonon modes. Phys. Solid State 43, 808–810 (2001). https://doi.org/10.1134/1.1371356

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  • DOI: https://doi.org/10.1134/1.1371356

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