Abstract
A generalization of the known theory describing the Hall channels with integer filling factors in inhomogeneous 2D electronic samples to the case of a stationary nonequilibrium state (with a nonzero Hall voltage V H across the 2D system) is proposed. For the central strip located near the extremum of the electron density, the theory predicts a change in its width and a shift of the whole strip from the equilibrium position as functions of V H . The theoretical results are used to interpret recent experiments on measuring the local electric fields along the Hall samples both in equilibrium conditions and in the presence of transport in the quantum Hall regime.
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 73, No. 5, 2001, pp. 283–286.
Original Russian Text Copyright © 2001 by Shikin.
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Shikin, V.B. Inhomogeneous Hall-geometry sample in the quantum Hall regime. Jetp Lett. 73, 246–249 (2001). https://doi.org/10.1134/1.1371063
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DOI: https://doi.org/10.1134/1.1371063