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Effect of oxygen on the chemical reactions and electron work function in Ba-Si and BaO-Si structures

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Abstract

Effects of the annealing in oxygen on the chemical composition and electron work function of Ba-Si and BaO-Si structures were studied. Thin Ba or BaO layers deposited onto silicon stimulate oxidation processes on the semiconductor surface. Treatment of the Ba-Si and BaO-Si samples at temperatures T s ≥500°C leads to the formation of a barium orthosilicate (Ba2SiO4) layer. A decrease in the electron work function observed for the silicon surface coated with both barium oxide and barium silicate layers provides for a more than tenfold increase in the electron emission current.

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Authors and Affiliations

  1. Kiev State University, Kiev, Ukraine

    V. V. Il’chenko & G. V. Kuznetsov

Authors
  1. V. V. Il’chenko
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  2. G. V. Kuznetsov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 8, 2001, pp. 58–63.

Original Russian Text Copyright © 2001 by Il’chenko, Kuznetsov.

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Il’chenko, V.V., Kuznetsov, G.V. Effect of oxygen on the chemical reactions and electron work function in Ba-Si and BaO-Si structures. Tech. Phys. Lett. 27, 333–335 (2001). https://doi.org/10.1134/1.1370218

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  • DOI: https://doi.org/10.1134/1.1370218

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