Abstract
Capacitance voltage and current voltage characteristics of BSTO ferroelectric films containing a manganese dioxide impurity (∼1.5–2 mol%) are compared to those of impurity-free samples. It is shown that in Mn-doped samples tan δ drops to 10−3, and the dependence of tan δ on the applied voltage changes as well. IVCs of these samples are strictly ohmic and do not show a nonlinearity at high voltages. A mechanism is proposed of the effect of Mn on the charge state of the defects comprising oxygen vacancies in BSTO films.
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 71, No. 4, 2001, pp. 136–140.
Original Russian Text Copyright © 2001 by Karmanenko, Dedyk, Isakov, Gordeichuk, Semenov, Ter-Martirosyan, Hagberg.
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Karmanenko, S.F., Dedyk, A.I., Isakov, N.N. et al. Study of the effect of manganese impurities on dielectric characteristics of BSTO films. Tech. Phys. 46, 498–502 (2001). https://doi.org/10.1134/1.1365480
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DOI: https://doi.org/10.1134/1.1365480