Abstract
For the first time, the overheating temperature ΔT p-n of the active region in green light-emitting diodes based on Group III nitrides has been determined as a function of the forward current amplitude I. It has been shown that in contrast to light-emitting diodes, in which the current-voltage characteristics are adequately described by known theories of rectification in p-n junctions and ΔT p-n ∝ I, in the structures under study, the dependence ΔT p-n (I) in the current range of 2×10−3−3×10−2 A is quadratic in current. At higher currents, the variation of ΔT p-n with I in the green light-emitting diodes based on Group III nitrides becomes linear, which is the same as in the light-emitting diodes based on known infrared and red III-V structures.
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 71, No. 4, 2001, pp. 76–79.
Original Russian Text Copyright © 2001 by Sukach, Smertenko, Oleksenko, Nakamura.
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Sukach, G.A., Smertenko, P.S., Oleksenko, P.F. et al. Analysis of the active region of overheating temperature in green LEDs based on Group III nitrides. Tech. Phys. 46, 438–441 (2001). https://doi.org/10.1134/1.1365468
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DOI: https://doi.org/10.1134/1.1365468