Abstract
Numerical simulation of the non-steady-state kinetics for the solid solutions MBE-grown from silane and germane with vapor sources was carried out. The smearing of the germanium distribution at the interfaces in the Si1−x Gex/Si structures was studied both in the absence of the atomic fluxes in the reactor and in their presence (the “hot-wire” method). It is shown that the use of an additional hot source enhances the growth. Moreover, at gas pressures exceeding 10−3 torr (provided that the gas flow remains molecular) and at growth temperatures T gr<600°C, such conditions can minimize the width of the transition regions at the interfaces.
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 71, No. 4, 2001, pp. 53–57.
Original Russian Text Copyright © 2001 by Orlov, Ivin, Potapov, Ivina.
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Orlov, L.K., Ivin, S.V., Potapov, A.V. et al. Mass transfer in non-steady-state hydride epitaxy of Si1−x Gex/Si structures. Tech. Phys. 46, 417–421 (2001). https://doi.org/10.1134/1.1365464
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DOI: https://doi.org/10.1134/1.1365464