Abstract
S-and N-type negative differential resistance (NDR) has been observed in thin-film electroluminescent emitters based on zinc sulfide doped with manganese, and conditions for its emergence have been identified. It has been found that when a negative half-wave of voltage is applied to the nontransparent top electrode, an S-type NDR with a region of decreasing current is observed, and when it is applied to the transparent bottom electrode, the NDR will be N-type. The emergence of NDR is due to space charges which form in the near-cathode and near-anode layers of the phosphor.
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 71, No. 3, 2001, pp. 72–75.
Original Russian Text Copyright © 2001 by Gurin, Shlyapin, Sabitov.
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Gurin, N.T., Shlyapin, A.V. & Sabitov, O.Y. Negative differential resistance in thin-film electroluminescent emitters based on zinc sulfide. Tech. Phys. 46, 342–345 (2001). https://doi.org/10.1134/1.1356487
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DOI: https://doi.org/10.1134/1.1356487