Abstract
The field dependence of photoemission currents in a MIS structure was derived for the case when the space charge is randomly distributed over the insulating layer. It was found analytically that the position of the top of the potential barrier for electrons photoinjected from the gate into the insulator is defined by the derivative of this barrier with respect to the external field strength. A method for correctly determining the space charge profile in a MIS insulator is suggested. The profile is derived from a family of spectral characteristics taken at different gate voltages. The method is especially suitable for profiling the negative charge in MIS insulators.
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 71, No. 3, 2001, pp. 46–51.
Original Russian Text Copyright © 2001 by Levin, Bormontov, Volkov, Ostroukhov, Tatarintsev.
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Levin, M.N., Bormontov, E.N., Volkov, O.V. et al. Charge distribution in a MIS insulator from spectral characteristics of photoemission current. Tech. Phys. 46, 316–321 (2001). https://doi.org/10.1134/1.1356483
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DOI: https://doi.org/10.1134/1.1356483