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Effect of misorientation angle on the photoluminescence spectra of Si (δ)-doped GaAs (111)A layers grown by molecular beam epitaxy

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, Moscow, 103907, Russia

    G. B. Galiev, V. G. Mokerov (Corresponding Member of the RAS) & Yu. V. Khabarov

Authors
  1. G. B. Galiev
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  2. V. G. Mokerov
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  3. Yu. V. Khabarov
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__________

Translated from Doklady Akademii Nauk, Vol. 376, No. 6, 2001, pp. 749–752.

Original Russian Text Copyright © 2001 by Galiev, Mokerov, Khabarov.

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Galiev, G.B., Mokerov, V.G. & Khabarov, Y.V. Effect of misorientation angle on the photoluminescence spectra of Si (δ)-doped GaAs (111)A layers grown by molecular beam epitaxy. Dokl. Phys. 46, 88–91 (2001). https://doi.org/10.1134/1.1355381

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