Abstract
Variation of the depth-concentration profiles of manganese atoms implanted into silicon was studied by the Rutherford backscattering (RBS) method in samples irradiated to various doses and annealed at different temperatures. The results are consistent with the analogous data obtained by an independent method. The post-implantation thermal annealing affects the distribution of Mn and other impurities, in particular, oxygen. The RBS method provides data both on the distribution of implanted dopants and on their interaction with other impurities.
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M. K. Bakhadyrkhanov, B. É. Égamberdiev, M. S. Abdugabbarov, and K. Khaidarov, Neorg. Mater. 31(3), 301 (1995).
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 27, No. 4, 2001, pp. 82–88.
Original Russian Text Copyright © 2001 by Égamberdiev, Adylov.
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Égamberdiev, B.É., Adylov, M.Y. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering. Tech. Phys. Lett. 27, 168–170 (2001). https://doi.org/10.1134/1.1352783
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DOI: https://doi.org/10.1134/1.1352783