Silicon interaction with the (0001) surface of La and Gd layers

Abstract

A study is reported on a system consisting of a Si layer on the surface of rare-earth metals (REMs), which is the reverse of a rare-earth metal on silicon, the system of current widespread interest. Interaction of silicon with the (0001) surface of trivalent La and Gd single-crystal layers grown on a W(110) surface is studied by Auger spectroscopy combined with layer-by-layer argon-ion etching of the system and photoelectron spectroscopy. It is found that silicon interacts with the La(0001) and Gd(0001) surfaces even at room temperature with the formation of silicide, but no mutual mixing of the silicon and substrate atoms occurs. When the Si/La(0001) and Si/Gd(0001) systems are heated at 400°C, silicon does not diffuse into the bulk of the metal substrate or to the REM/W(110) interface.

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Translated from Fizika Tverdogo Tela, Vol. 43, No. 2, 2001, pp. 363–368.

Original Russian Text Copyright © 2001 by Grigor’ev, Krupin, Vyalykh, Dedkov, Shikin, Prudnikova, Adamchuk.

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Grigor’ev, A.Y., Krupin, O.V., Vyalykh, D.V. et al. Silicon interaction with the (0001) surface of La and Gd layers. Phys. Solid State 43, 380–385 (2001). https://doi.org/10.1134/1.1349492

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Keywords

  • Spectroscopy
  • Silicon
  • State Physics
  • Auger
  • Metal Substrate